Thermal Oxide Silicon Wafer – Si/SiO2 wafer

Description

• Wet Thermal Oxide (Silicon Dioxide, SiO2) on Both Sides
• Oxide Thickness: 285-nm +/- 5%
• Type: P
• Dopant: Boron
• Polishing: Single-side (SSP)
• Grade: Prime
• Dimensions: 100-mm diameter
• Thickness: 525 +/- 25 μm
• Resistivity: ≤ 0.005 ohm-cm
• Orientation: <100>
• SEMI flats: 2